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INTEGRATED CIRCUITS
DATA SHEET
TDA1072AT AM receiver circuit
Product specification File under Integrated Circuits, IC01 March 1989
Philips Semiconductors
Product specification
AM receiver circuit
GENERAL DESCRIPTION
TDA1072AT
The TDA 1072AT integrated AM receiver circuit performs the active and part of the filtering functions of an AM radio receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator frequencies up to 50 MHz and can handle RF signals up to 500 mV. RF radiation and sensitivity to interference are minimized by an almost symmetrical design. The voltage-controlled oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range even when tuning with variable capacitance diodes. If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier. Features * Inputs protected against damage by static discharge * Gain-controlled RF stage * Double balanced mixer * Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils * Gain-controlled IF stage with wide AGC range * Full-wave, balanced envelope detector * Internal generation of AGC voltage with possibility of second-order filtering * Buffered field strength indicator driver with short-circuit protection * AF preamplifier with possibilities for simple AF filtering * Electronic standby switch. QUICK REFERENCE DATA PARAMETER Supply voltage range Supply current range RF input voltage for S+N/N = 6 dB at m = 30% RF input voltage for 3% total harmonic distortion (THD) at m = 80% AF output voltage with VI = 2 mV; fI = 1 MHz; m = 30% and fm = 400 Hz AGC range: change of VI for 1 dB change of VO(AF) Field strength indicator voltage at VI = 500 mV; RL(9) = 2.7 k PACKAGE OUTLINE 16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 August 13. VIND - 2.8 - V - 86 - dB VO(AF) - 310 - mV VI - 500 - mV VI - 1.5 - V CONDITIONS SYMBOL VP IP MIN. 7.5 15 - - TYP. MAX. 10 26 UNIT V mA
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
(1) Coil data: TOKO sample no. 7XNS-A7523DY; L1: N1/N2 = 12/32; Qo = 65; QB = 57. Filter data: ZF = 700 at R3-4 = 3 k; Z1 = 4.8 k.
Fig.1 Block diagram and test circuit (connections shown in broken lines are not part of the test circuit).
March 1989
3
Philips Semiconductors
Product specification
AM receiver circuit
FUNCTIONAL DESCRIPTION Gain-controlled RF stage and mixer
TDA1072AT
The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range. Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are handled with low distortion and the S/N ratio of small signals is also improved. Low noise working is achieved in the differential amplifier by using transistors with a low base resistance. A double balanced mixer provides the IF output to pin 1. Oscillator The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V11-16. An extra buffered oscillator output is available for driving a synthesizer. If this is not needed, resistor RL(10) can be omitted. Gain-controlled IF amplifier This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both stages are gain-controlled by the AGC negative feedback network. Detector The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. The residual IF carrier is blocked from the signal path by an internal low-pass filter. AF preamplifier This stage preamplifies the audio frequency output. The amplifier output stage uses an emitter follower with a series resistor which, together with an external capacitor, provides the required low-pass filtering for AF signals. AGC amplifier The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives a fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced by using capacitors of smaller value in the external filter. The AGC voltage is fed to the RF and IF stages via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications. Field strength indicator output A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. If field strength information is not needed, RL(9) can be omitted. Standby switch This switch is primariIy intended for AM/FM band switching. During standby mode the oscillator, mixer and demodulator are switched off. Short-circuit protection All pins have short-circuit protection to ground.
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
RATINGS Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) PARAMETER Supply voltage Input voltage pins 14-15 pins 14-16 pins 15-16 pins 14-16 pins 15-16 Input current (pins 14 and 15) Total power dissipation (note 1) Operating ambient temperature range Storage temperature range Junction temperature Note 1. Mounted on epoxiprint. THERMAL RESISTANCE From junction to ambient Rth j-a I14-15 Ptot Tamb Tstg Tj - - -40 -55 - V14-15 V14-16 V15-16 V14-16 V15-16 - - - - - CONDITIONS VP = V13-16 SYMBOL V13 MIN. -
TDA1072AT
MAX. 12 10 VP VP -0.6 -0.6 200 300 + 80 + 150 + 125
UNIT V V V V V V mA mW C C C
300 K/W 160 K/W(1)
Note 1. Mounted on epoxiprint.
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
CHARACTERISTICS VP = V13-16 = 8.5 V; Tamb = 25 C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all measurements are with respect to ground (pin 16); unless otherwise specified PARAMETER Supplies Supply voltage (pin 13) Supply current (pin 13) RF stage and mixer Input voltage (DC value) RF input impedance at VI < 300 V RF input impedance at VI > 10 mV IF output impedance Conversion transconductance before start of AGC Maximum IF output voltage, inductive coupling to pin 1, (peak-to-peak value) DC value of output current (pin 1) at VI = 0 V AGC range of input stage RF signal handling capability: input voltage for THD = 3% at m = 80% (RMS value) Oscillator Frequency range Oscillator amplitude (pins 11 to 12) (peak-to-peak value) External load impedance External load impedance for no oscillation Ripple rejection at VP = 100 mV (RMS value); fp = 100 Hz (RR = 20 log [V13/V11]) R11-12(ext) - - 60 V11-12(p-p) R11-12(ext) - 0.5 130 - 150 200 mV k f 0.6 - 60 MHz VI(rms) - 500 - mV I1 - - 1.2 30 - - mA dB V1(p-p) - 5 - V I1/VI - 6.5 - mA/V R14-15 C14-15 R1 C1 - - 500 - 8 22 0 6 - - 0 - k pF k pF R14-15 C14-15 - - 5.5 25 - - k pF V14-15 - VP / 2 - V V13 I13 7.5 15 8.5 23 10 27 V mA CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
PARAMETER Source voltage for switching diodes (6 x VBE) DC output current (for switching diodes) Change of output voltage at I11 = 20 mA (switch to maximum load) Buffered oscillator output DC output voltage Output signal amplitude (peak-to-peak value) Output impedance Output current IF, AGC and AF stages DC input voltage IF input impedance IF input voltage for THD = 3% at m = 80% Voltage gain before start of AGC AGC range of IF stages: change of V3-4 for 1 dB change of VO(AF); V3-4(ref) = 75 mV AF output voltage at V3-4(IF) = 50 V AF output voltage at V3-4(IF) = 1 mV AF output impedance (pin 6) Indicator driver Output voltage at VI = 0 mV Output voltage at VI = 500 mV Load resistance
CONDITIONS
SYMBOL V11 -
MIN.
TYP. 4.2
MAX. -
UNIT V
VP = V13 9V I11 0 - 5 mA
V11 V10 V10(p-p) R10 I10(peak) V3-4 R3-4 C3-4 V3-4 V3-4/V6
- - - - - - 2.4 - - -
0.5
- - - - -3 - 3.9 - - -
V
0.7 320 170 -
V mV mA
2 3.0 7 90 68
V k pF mV dB
V3-4 VO(AF) VO(AF) ZO
- - - -
55 130 310 3.5
- - - -
dB mV mV k
RL(9) = 2.7 k RL(9) = 2.7 k
V9 V9 RL(9)
- 2.5 2.7
20 2.8 -
150 3.1 -
mV V k
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
PARAMETER Standby switch Switching threshold at VP = 7.5 to 18 V; Tamb = -40 to +80 C ON-voltage OFF-voltage ON-current OFF-current
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
V2 V2 V2 = 0 V V2 = 20 V I2 I2
0 3.5 - -
- - - -
2 20 -200 10
V V A A
OPERATING CHARACTERISTICS VP = 8.5 V; fI = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 C; measured in Fig.1; unless otherwise specified PARAMETER RF sensitivity RF input required for S+N/N = 6 dB S+N/N = 26 dB S+N/N = 46 dB RF input at start of AGC RF large signal handling RF input at THD = 3%; m = 80% THD = 3%; m = 30% THD = 10%; m = 30% AGC range Change of VI for 1 dB change of VO(AF) 6 dB change of VO(AF) Output signal AF output voltage at VI = 4 V VI = 1 mV Total harmonic distortion at VI = 1 mV VI = 500 mV Signal-to-noise ratio m = 80% m = 30% VI = 100 mV dtot dtot S+N/N - - - 0.5 1 58 - - - % % dB m = 80% VO(AF) VO(AF) - 240 130 310 - 390 mV mV VI(ref) = 500 mV VI(ref) = 500 mV VI VI - - 86 91 - - dB dB VI VI VI - - - 500 700 900 - - - mV mV mV VI VI VI VI - - - - 1.5 15 150 30 - - - - V V V V CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
PARAMETER Ripple rejection at VI = 2 mV VP = 100 mV (RMS value) fp = 100 Hz (RR = 20 log [VP/VO(AF)]) Unwanted signals Suppression of IF whistles at VI = 15 V; m = 0% related to AF signal of m = 30% at fI 2 x fIF at fI 3 x fIF IF suppression at RF input for symmetrical input for asymmetrical input Residual oscillator signal at mixer output at fosc at 2 x fosc
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
RR
-
38
-
dB
2IF 3IF IF IF
- - - -
37 44 40 40
- - - -
dB dB dB dB
I(osc) I(2osc)
- -
1 1.1
- -
A A
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
APPLICATION INFORMATION
TDA1072AT
(1) Capacitor values depend on crystal type. (2) Coil data: 9 windings of 0.1 mm dia laminated Cu wire on TOKO coil set 7K 199CN; Qo = 80.
Fig.2 Oscillator circuit using quartz crystal; centre frequency = 27 MHz.
Fig.4 Fig.3 AF output as a function of RF input in the circuit of Fig.1; fI = 1 MHz; fm = 400 Hz; m = 30%.
Total harmonic distortion and S+N/N as functions of RF input in the circuit of Fig.1; m = 30% for (S+N)/N curve and m = 80% for THD curve.
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
Fig.5
Total harmonic distortion as a function of modulation frequency at VI = 5 mV; m = 80%; measured in the circuit of Fig.1 with C7-16(ext) = 0 F and 2.2 F.
--
with IF filter with AF filter with IF and AF filter
Fig.6 Indicator driver voltage as a function of RF input in the circuit of Fig.1. Fig.7
Typical frequency response curves from Fig.1 showing the effects of filtering.
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
Fig.8 Car radio application with inductive tuning.
Fig.9 AF output as a function of RF input using the circuit of Fig.8 with that of Fig.1.
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
Fig.10 Suppression of cross-modulation as a function of input signal, measured in the circuit of Fig.8 with the input circuit as shown in Fig.11. Curve is for wanted VO(AF)/unwanted VO(AF) = 20 dB; Vrfw, Vrfu are signals at the aerial input, V'aew, V'aeu are signals at the unloaded output of the aerial. Wanted signal (V'aew, Vrfw): fi = 1 MHz; fm = 400 Hz; m = 30%. Unwanted signal (V'aeu, Vrfu): fi = 900 kHz; fm = 400 Hz; m = 30%. Effective selectivity of input tuned circuit = 21 dB.
Fig.11 Input circuit to show cross-modulation suppression (see Fig.10).
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
Fig.12 Oscillator amplitude as a function of the impedance at pins 11 and 12 in the circuit of Fig.8.
Fig.13 Total harmonic distortion and (S+N)/N as functions of RF input using the circuit of Fig.8 with that of Fig.1.
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
Fig.14 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in Fig.14; centre frequency = 455 kHz.
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Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
Fig.15 IF filter variants applied to the circuit of Fig.1; for filter data refer to Table 1.
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Table 1 2 L1 430 13 : (33 + 66) 0.08 50 75 60 75 0.09 0.08 0.09 mm 15 : 31 29 : 29 13 : 31 3900 4700 3900 pF L1 L2 L1 3 4 UNIT
Data for IF filters shown in Fig.15. Criterium for adjustment is ZF = maximum (optional selectivity curve at centre frequency fo = 455 kHz). See also Fig.14.
March 1989
FILTER NO.
1
Coil data
L1
Value of C
3900
Philips Semiconductors
N1: N2
12 : 32
Diameter of Cu
AM receiver circuit
laminated wire
0.09
Qo
65 (typ.)
Schematic * of windings
(N1) L7PES-A0060BTG SFZ455A 4 3 4.2 24 3.8 40 0.67 3.8 31 49 58 52 (L1) 0.68 3.6 36 54 66 4.2 18 (L2) 24 4.2 3 4 SFZ455A 7XNS-A7518DY 7XNS-A7521AIH
(N2) 7XNS-A7519DY SFT455B 6 3 4.5 38 4.8 55 0.68 4.0 42 64 74 k kHz dB dB dB dB k kHz dB k
Toko order no.
7XNS-A7523DY
Resonators
Murata type
SFZ455A
17
D (typical value)
4
RG, RL
3
Bandwidth (-3 dB)
4.2
S9kHz
24
Filter data
ZI
4.8
QB
57
ZF
0.70
Bandwidth (-3 dB)
3.6
S9kHz
35
S18kHz
52
S27kHz
63
TDA1072AT
Product specification
* The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding. N2 the outer winding.
March 1989
Philips Semiconductors
AM receiver circuit
18
(1) Values of capacitors depend on the selected group of capacitive diodes BB112. (2) For IF filter and coil data refer to Fig.1.
TDA1072AT
Product specification
Fig.16 Car radio application with capacitive diode tuning and electronic MW/LW switching. The circuit includes pre-stage AGC optimised for good large-signal handling.
Philips Semiconductors
Product specification
AM receiver circuit
PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm
TDA1072AT
SOT109-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 0.24 0.23 L 1.05 0.041 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.0098 0.057 0.069 0.0039 0.049
0.019 0.0098 0.39 0.014 0.0075 0.38
0.028 0.004 0.012
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07S JEDEC MS-012AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 91-08-13 95-01-23
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end.
TDA1072AT
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
March 1989
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Philips Semiconductors
Product specification
AM receiver circuit
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA1072AT
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1989
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